Process design of the pulse injection method for low-temperature metal organic vapor phase epitaxial growth of AlN at 800 °C

Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 383-388

  Yang, Jung Seung ^a,b   Sodabanlu, Hassanet ^a   Waki, Ichitaro ^a   Sugiyama, Masakazu ^a,b   Nakano, Yoshiaki ^a,b   Shimogaki, Yukihiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Crystal morphology; A1. Crystal structure; A3. Metalorganic vapor phase epitaxy; B1. Nitride; B2. Semiconducting aluminum compounds

Indexed keywords

AGGLOMERATION; ALUMINA; ALUMINUM COMPOUNDS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; GROWTH (MATERIALS); HYDROGEN; MASS SPECTROMETRY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; ORGANOMETALLICS; OXYGEN; PHASE INTERFACES; PROCESS ENGINEERING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUPERCONDUCTING FILMS; VAPORS; X RAY DIFFRACTION ANALYSIS;

A1. CRYSTAL MORPHOLOGY; A1. CRYSTAL STRUCTURE; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDE; B2. SEMICONDUCTING ALUMINUM COMPOUNDS;

CRYSTAL STRUCTURE;

EID: 58549093908     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.086     Document Type: Article

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