Low temperature metal organic vapor phase epitaxial growth of AlN by pulse injection method at 800°C

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 36-40, 2007, Pages

  Yang, Jung Seung ^a,b   Sodabanlu, Hassanet ^a   Waki, Ichitaro ^a   Sugiyama, Masakazu ^a,b   Nakano, Yoshiaki ^a,b   Shimogaki, Yukihiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

AIN; Low temperature growth; MOVPE; Pulse injection (PI) method

Indexed keywords

CRYSTAL GROWTH; FULL WIDTH AT HALF MAXIMUM; LOW TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; SURFACE ROUGHNESS; X RAY DIFFRACTION;

HIGH RESOLUTION X RAY DIFFRACTION; LOW TEMPERATURE GROWTH; PULSE INJECTION (PI) METHODS;

ALUMINUM COMPOUNDS;

EID: 36048929093     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L927     Document Type: Article

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