Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 397-401

  Liu, X Y ^a   Falth J F ^a   Andersson, T G ^a   Holmstrom P ^b   Janes P ^b   Ekenberg, U ^b   Thylen L ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

A1. FT IR spectroscopy; A1. Intersubband transitions; A1. X ray diffraction; A3. Molecular beam epitaxy; A3. Multiple quantum wells; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM COMPOUNDS; FIBER OPTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

INTERSUBBAND TRANSITION; MULTIPLE QUANTUM WELL (MQW); SPACE MAPPING; STRUCTURAL PARAMETERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18444398374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.080     Document Type: Conference Paper

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