High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Morii, Kiyohito ^a   Iwasaki, Takashi ^a   Nakane, Ryosho ^a   Takenaka, Mitsuru ^a,b   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DIFFUSION; GAS PHASE DOPING; HIGH ELECTRON MOBILITY; ION IMPLANTATION DOPING; JUNCTION FORMATION; JUNCTION LEAKAGE CURRENTS; MOSFETS; MOVPE; N-CHANNEL; NMOSFETS; SOURCE/DRAIN JUNCTIONS;

ARSENIC; ELECTRIC BREAKDOWN; ELECTRON DEVICES; ELECTRON MOBILITY; GASES; ION IMPLANTATION; LEAKAGE (FLUID); MOSFET DEVICES;

GERMANIUM;

EID: 77952408916     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424248     Document Type: Conference Paper

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