Impact of oxide defects on band offset at GeO2 /Ge interface

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Yang, M ^a   Wu, R Q ^a   Chen, Q ^a   Deng, W S ^a   Feng, Y P ^a   Chai, J W ^b   Pan, J S ^b   Wang, S J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SOURCES; BAND ALIGNMENTS; BAND OFFSETS; CONDUCTION BAND OFFSETS; HIGH QUALITIES; HIGH RESOLUTIONS; OXIDATION STAGES; PROJECTED DENSITY OF STATE; VALENCE BAND OFFSETS; X-RAY PHOTOEMISSION SPECTROSCOPIES;

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; GERMANIUM; OXIDATION; OXYGEN; OXYGEN VACANCIES;

HETEROJUNCTIONS;

EID: 64349120851     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3115824     Document Type: Article

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