Current SiC technology for power electronic devices beyond Si

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 2-4

  Matsunami, H ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Device processes; Power electronic devices; Silicon carbide; Step controlled epitaxy

Indexed keywords

CRYSTAL GROWTH; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; SCHOTTKY BARRIER DIODES;

DEVICE PROCESSES; POWER ELECTRONIC DEVICES; STEP-CONTROLLED EPITAXY;

SILICON CARBIDE;

EID: 30344484224     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.012     Document Type: Conference Paper

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