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Volumn 58, Issue 3, 1998, Pages 1318-1325

Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon

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EID: 0001059762     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.1318     Document Type: Article
Times cited : (252)

References (48)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.