Normally-off GaN-MISFET with well-controlled threshold voltage

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 6, 2007, Pages 2010-2013

  Kuraguchi, Masahiko ^a   Takada, Yoshiharu ^a   Suzuki, Takashi ^a   Hirose, Mayumi ^a   Tsuda, Kunio ^a   Saito, Wataru ^a   Saito, Yasunobu ^a   Omura, Ichiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING DEPTH; WELL-CONTROLLED THRESHOLD VOLTAGE;

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; EPITAXIAL LAYERS; GALLIUM NITRIDE; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

MISFET DEVICES;

EID: 34547151686     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674720     Document Type: Conference Paper

References (6)

1. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, IEEE Trans. Electron Devices 53, 356 (2006).
2. V. Kumar, A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida, IEEE Electron Device Lett. 39, 1758 (2003).
3. T. Kawasaki, K. Nakata, and S. Yaegassi, Int. Conf. Solid State Devices and Materials (2005).
4. Y. Cai, Y. Zhou, K. J. Chen, and K. M. Lau, IEEE Electron Device Lett. 26, 435 (2005).
5. M. Kuraguchi, Y. Takada, W. Saito, T. Suzuki, M. Hirose, N. Saito, I. Omura, and K. Tsuda, 53rd Spring Meeting Japan Society of Applied Physics and Related Societies (2006).
6. S. Yoshida, J. Li, and N. Ikeda, phys. stat. sol. (c) 2(7), 2593 (2005).