Nonpolar (11-20) plane AlGaNGaN heterojunction field effect transistors on (1-102) plane sapphire

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Kuroda, Masayuki ^a   Ishida, Hidetoshi ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; PIEZOELECTRIC DEVICES; POLARIZATION; SAPPHIRE; SEMICONDUCTOR MATERIALS; TRANSISTORS;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET); NONPOLAR DEVICES; POLARIZATION FIELDS; POWER SWITCHING DEVICES;

HETEROJUNCTIONS;

EID: 36248951539     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801015     Document Type: Article

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