GaN MOSFETs with large current and normally-off operation

ECS Transactions

Volumn 16, Issue 7, 2009, Pages 161-168

  Niiyama, Yuki ^a   Kambayashi, Hiroshi ^a   Ootomo, Shinya ^a   Ikeda, Nariaki ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOSFET DEVICES; NITRIDES; SILICA; SILICON; SILICON CARBIDE; THRESHOLD VOLTAGE;

CONTACT LAYERS; CRITICAL ELECTRIC FIELD; HIGH TEMPERATURE DEVICE; INTERFACE QUALITY; LOW RESISTANCE; MOSFET STRUCTURES; SATURATION VELOCITY; THERMAL CONTROL;

WIDE BAND GAP SEMICONDUCTORS;

EID: 63849261162     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2983172     Document Type: Conference Paper

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