Enhanced electroluminescence intensity of InGaNGaN multi-quantum-wells based on Mg-doped GaN annealed in O2

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Ma, Ping ^a   Gai, Yanqin ^a   Wang, Junxi ^a   Yang, Fuhua ^a   Zeng, Yiping ^a   Li, Jinmin ^a   Li, Jingbo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTROLUMINESCENCE INTENSITY; MG-DOPED; MULTI-QUANTUM-WELLS;

LIGHT;

EID: 51749091053     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2980032     Document Type: Article

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