Si diffusion in p-GaN

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1727-1730

  Pan, C J ^a   Chi, G C ^a   Pong, B J ^a   Sheu, J K ^a   Chen, J Y ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON;

CARRIER TRANSPORT; HALL MEASUREMENTS; HIGH TEMPERATURE TRANSISTORS; LATTICE DAMAGE;

DIFFUSION IN SOLIDS;

EID: 4944248627     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1767826     Document Type: Article

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