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Volumn , Issue , 2007, Pages 157-160

Induction heating system operation by soft switching GaN heterojunction field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; INDUCTION HEATING;

EID: 39749090500     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294956     Document Type: Conference Paper
Times cited : (6)

References (7)
  • 2
    • 0020098824 scopus 로고
    • Semiconductors for high-voltage, vertical channel field effect transistors
    • B. J. Baliga, "Semiconductors for high-voltage, vertical channel field effect transistors," J. Appl. Phys. vol. 53, pp. 1759-1764, 1982.
    • (1982) J. Appl. Phys , vol.53 , pp. 1759-1764
    • Baliga, B.J.1
  • 3
    • 0024749835 scopus 로고
    • Power Semiconductor Device Figure of Merit for High-Frequency Applications
    • B.J. Baliga, "Power Semiconductor Device Figure of Merit for High-Frequency Applications," IEEE Electron Device Lett. vol. 10, pp. 455-457. 1989.
    • (1989) IEEE Electron Device Lett , vol.10 , pp. 455-457
    • Baliga, B.J.1
  • 4
    • 0347338036 scopus 로고    scopus 로고
    • High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior
    • W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, and H. Ohashi, "High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior," IEEE Trans. Electron Dev. vol. 50, pp. 2528-2531, 2003.
    • (2003) IEEE Trans. Electron Dev , vol.50 , pp. 2528-2531
    • Saito, W.1    Takada, Y.2    Kuraguchi, M.3    Tsuda, K.4    Omura, I.5    Ogura, T.6    Ohashi, H.7
  • 5
    • 0041931053 scopus 로고    scopus 로고
    • S. Yoshida, J.Li, T. Wada, H. Takehara, High Power AlGaN/GaN HFET with a lower On-state Resistance and a Higher Switching Time for an Inverter Circuit, in: 15th Internationa! Symposium on Power Semiconductor Devices and ICs (ISPSD) 2003, S3.3, p.58-61.
    • S. Yoshida, J."Li, T. Wada, H. Takehara, "High Power AlGaN/GaN HFET with a lower On-state Resistance and a Higher Switching Time for an Inverter Circuit,", in: 15th Internationa! Symposium on Power Semiconductor Devices and ICs (ISPSD) 2003, S3.3, p.58-61.
  • 7
    • 39749125509 scopus 로고    scopus 로고
    • N. Ikeda, K. Kato, K. Kondoh, H. Kambayashi, J. Li, and S. Yoshida, Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application, phys. stat. solidi., to be published.
    • N. Ikeda, K. Kato, K. Kondoh, H. Kambayashi, J. Li, and S. Yoshida, "Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application," phys. stat. solidi., to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.