Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate

Electronics Letters

Volumn 45, Issue 7, 2009, Pages 379-380

  Niiyama, Y ^a   Kambayashi, H ^a   Ootomo, S ^a   Nomura, T ^a   Kato, S ^a   Chow, T P ^b  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CORUNDUM; GALLIUM NITRIDE; ION BOMBARDMENT; ION IMPLANTATION; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SUBSTRATES;

CHANNEL LENGTHS; CHANNEL WIDTHS; IMPLANTATION TECHNIQUES; METAL OXIDE SEMICONDUCTORS; MOSFETS; REDUCED SURFACE FIELDS; SAPPHIRE SUBSTRATES; SHEET CARRIER DENSITIES;

GALLIUM ALLOYS;

EID: 63349102441     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.2851     Document Type: Article

References (13)

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