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Volumn 108, Issue 6, 2010, Pages

Distribution of donor states on etched surface of AlGaN/GaN heterostructures

(6) Higashiwaki, Masataka a,b Chowdhury, Srabanti a Miao, Mao Sheng a Swenson, Brian L a Van De Walle, Chris G a Mishra, Umesh K a

a University of California (United States)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; BAND GAPS; BARRIER THICKNESS; CONDUCTION-BAND MINIMUM; DENSITY DISTRIBUTIONS; DONOR STATE; ELECTRON DENSITIES; ETCHED SURFACE; FIRST-PRINCIPLES CALCULATION; HIGH-DENSITY; LOW POWER; MODEL-BASED; SINGLE HETEROSTRUCTURES; SOURCE OF ELECTRONS; SURFACE BARRIER; SURFACE STATE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CRYSTALS; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; HETEROJUNCTIONS; REACTIVE ION ETCHING; TWO DIMENSIONAL ELECTRON GAS;

TWO DIMENSIONAL;

EID: 77957743617 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3481412 Document Type: Article

Times cited : (78)

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