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Journal of Physics Condensed Matter

Volumn 14, Issue 13, 2002, Pages 3511-3522

Heterostructure field effect transistors based on nitride interfaces

(3) Majewski, J A a Zandler, G a Vogl, P a

a WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MESFET DEVICES; MONTE CARLO METHODS; NITRIDES; OPTICAL PROPERTIES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; NITRIDE INTERFACES; PIEZOELECTRIC POLARIZATION FIELDS; STRUCTURAL PROPERTIES;

HETEROJUNCTIONS;

EID: 0037041124 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/13/309 Document Type: Article

Times cited : (16)

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