Novel nitride devices based on polarization fields

Physica Status Solidi (A) Applied Research

Volumn 179, Issue 1, 2000, Pages 285-293

  Majewski, J A ^a   Zandler, G ^a   Vogl, P ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL LATTICES; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONTE CARLO METHODS; PIEZOELECTRICITY; POLARIZATION; PYROELECTRICITY; STACKING FAULTS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; LATTICE RELAXATION;

NITRIDES;

EID: 0033686965     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200005)179:1<285::AID-PSSA285>3.0.CO;2-B     Document Type: Article

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