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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages

Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist

(6) Duan, Huigao a,b,c Winston, Donald a Yang, Joel K W a,c Cord, Bryan M a Manfrinato, Vitor R a Berggren, Karl K a

a Department of Electrical Engineering and Computer Science (United States)

b LANZHOU UNIVERSITY (China)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRONS; ESTERS; FLIGHT DYNAMICS; MAGNETIC STORAGE; NANOPHOTONICS; SCANNING ELECTRON MICROSCOPY;

CALIXARENES; EXPOSURE ENERGY; HIGH RESOLUTION; HIGH-DENSITY; HYDROGEN SILSESQUIOXANE; NANOPHOTONIC DEVICES; NEGATIVE TONES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 78650142219 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3501353 Document Type: Article

Times cited : (94)

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