Optimum energy for high resolution low voltage electron beam lithography - Monte Carlo simulations and experiments

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 337-340

  Peuker, M ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; COMPUTER SIMULATION; COPOLYMERS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; MASKS; MONTE CARLO METHODS; MULTILAYERS; PHOTORESISTS; REACTIVE ION ETCHING;

ELECTRON BACKSCATTERING COEFFICIENTS; HIGH RESOLUTION LOW VOLTAGE ELECTRON BEAM LITHOGRAPHY; THIN TRILEVEL PROCESS LAYER SYSTEMS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034205477     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00328-2     Document Type: Article

References (12)

1. 1. G. Schneider, T. Schliebe, H. Aschoff, J. Vac. Sci. Technol. B 13, 2809 (1995).
2. 2. T. Schliebe, Microelectronic Engineering 41/42, 465 (1998).
3. 3. T. Wilhein, S. Rehbein, D. Hambach, M. Berglund, L. Rymell, and H. M. Hertz, Rev. Sci. Instrum. 70, 1694 (1999).
4. 4. W. Brünger, E.-B. Kley, B. Schnabel, I. Stolberg, M. Zierbock, R. Plontke, Microelectronic Engineering 27, 135 (1995).
5. 5. D. Weiß, M. Peuker, and G. Schneider, Appl. Phys. Lett. 72, 1805 (1998).
6. 6. D. C. Joy, S. Luo, Scanning 11, 176 (1989).
7. 7. G. D. Archard, J. Appl. Phys. 32, 1505 (1961).
8. 8. R. Browning, T. Z. Li, B. Chui, J. Ye, R. F. W. Pease, Z. Czyzewski, and D. C. Joy, J. Appl. Phys. 76, 2016 (1994).
9. 9. D. C. Joy, Monte Carlo Simulation for Electron Microscopy and Microanalysis (Oxford University Press, Oxford, New York, 1995).
10. 10. H.-J. Hunger and L. Küchler, Phys. Stat. Sol. (A) 56, K45 (1979).
11. 11. H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, T. Furuta, and K. Murase, J. Vac. Sci. Technol. B 13, 1473 (1995).
12. 12. J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui, Appl. Phys. Lett. 68, 1297 (1996).