Formation of dot arrays with a pitch of 20 nm x 20 nm for patterned media using 30 keV EB drawing on thin calixarene resist

Nanotechnology

Volumn 19, Issue 2, 2008, Pages

  Bin Mohamad, Zulfakri ^a   Shirai, Masumi ^a   Sone, Hayato ^a   Hosaka, Sumio ^a   Kodera, Masatoshi ^b  

^a GUNMA UNIVERSITY   (Japan)

^b OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAWING (GRAPHICS); THICKNESS MEASUREMENT;

DOT ARRAYS; THIN CALIXARENE RESIST;

ELECTRON BEAMS;

CALIXARENE;

ARTICLE; ELECTRON BEAM; MATHEMATICAL MODEL; PARTICLE SIZE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPE; THICKNESS;

EID: 36849037783     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/02/025301     Document Type: Article

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