Lifetime modeling of ZnO thin-film transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 12, 2010, Pages 3460-3465

  Redinger, David H ^a  

^a 3M COMPANY   (United States)

Author keywords

Accelerated testing; active matrix displays; degradation; flexible; thin film transistors (TFTs); threshold voltage

Indexed keywords

ACCELERATED TESTING; ACTIVE-MATRIX DISPLAYS; FLEXIBLE; NOVEL METHODS; POLYCRYSTALLINE; POLYCRYSTALLINE METALS; POLYETHYLENE NAPHTHALATE; SEMICONDUCTOR GRAIN; THRESHOLD-VOLTAGE SHIFT; TRANSPORT MODELS; ZNO;

DEGRADATION; FLEXIBLE DISPLAYS; GRAIN BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; THRESHOLD VOLTAGE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78650032421     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2081231     Document Type: Article

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