A current estimation method for bias-temperature stress of a-Si TFT device

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 2, 2007, Pages 347-350

  Shih, Ching Chieh ^b   Lee, Yeong Shyang ^b   Fang, Kuo Lung ^a,b   Chen, Ching Hung ^b   Gan, Feng Yuan ^b  

^a IEEE

^b AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

Amorphous silicon; BTS; Current estimation; Reliability; TFT

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; RELIABILITY ANALYSIS; THRESHOLD VOLTAGE;

CURRENT ESTIMATION; STRESS BIAS; STRESS TEMPERATURE; THRESHOLD VOLTAGE SHIFT;

THIN FILM TRANSISTORS;

EID: 34548249534     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.901068     Document Type: Conference Paper

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