The abnormal degradation behavior of ZnO TFT under bias stress

ECS Transactions

Volumn 3, Issue 8, 2006, Pages 301-305

  Hwang, Chi Sun ^a   Park, Sang Hee Ko ^a   Chung, Sung Mook ^a   Lee, Jeong Lk ^a   Yang, Yong Suk ^a   Do, Lee Mi ^a   Chu, Hye Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; GATES (TRANSISTOR); HYDROGEN; ZINC OXIDE;

ATOMIC LAYER DEPOSITION (ALD); GATE BIAS STRESS; TEMPERATURE DEPENDENCE;

THIN FILM TRANSISTORS;

EID: 33847005111     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356367     Document Type: Conference Paper

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3. Chi-Sun Hwang, Sang-Hee Ko Park, and Hye Yong Chu, IDW'05, 1149 (2005).
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5. M. G. Wardle, J. P. Goss, and P. R. Briddon, Phys. Rev. Lett. 96, 205504 (2006)