Bootstrapped ring oscillator with propagation delay time below 1.0 nsec/stage by standard 0.5μm bottom-gate amorphous Ga2O 3-in2O3-ZnO TFT technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Yin, Huaxiang ^a   Kim, Sunil ^a   Kim, Chang Jung ^a   Park, Jae Chul ^a   Song, Ihun ^a   Kim, Sang Wook ^a   Lee, Sung Hoon ^a   Park, Youngsoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRY PARAMETERS; INVERTER STRUCTURES; OVERLAP CAPACITANCES; PROPAGATION DELAY TIME; PROPAGATION DELAYS; RING OSCILLATORS; STAGE RING OSCILLATORS; SUPPLY VOLTAGES; ZNO;

ELECTRON DEVICES; GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

CAPACITANCE;

EID: 64549106875     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796619     Document Type: Conference Paper

References (6)

1. C. J. Kim et al., "Highly stable Ga2O3-In2O3-ZnO TFT for active matrix organic light-emitting diode display application, " in IEDM Tech. Dig., pp. 307-310, 2006.
2. A. Suresh, P. Wellenius and J. F. Muth, "High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material, " in IEDM Tech. Dig., pp. 587-590, 2007.
3. J. Sun et al., "ZnO thin film transistor ring oscillators with sub 75 nsec propagation delay, " in IEDM Tech. Dig., pp. 579-582, 2007.
4. M. Ofuji et al., "Fast thin-film transistor circuits based on amorphous oxide semiconductor, " IEEE Electron Device Lett., vol. 28, no. 4, pp. 273-275, 2007.
5. T. Sato, S. Mizushima, S. Imai, Y. Suzuki and S. Murata, "High speed standard cell using bootstrapped technology for LTPS TFT, " in IEEE Proc. ISCIT, p. 226-229, 2007.
6. J. Park et al., "Source/drain series-resistance effects in amorphous gallium-indium zinc-oxide thin film transistors," IEEE Electron Device Lett., vol. 29, no. 8, pp. 879-881, 2008.