Nitrogen at the Si-nanocrystal/SiO2 interface and its influence on luminescence and interface defects

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 19, 2010, Pages

  Hiller, Daniel ^a   Goetze, Silvana ^b   Munnik, Frans ^c   Jivanescu, Mihaela ^d   Gerlach, Jürgen W ^e   Vogt, Jürgen ^f   Pippel, Eckhard ^b   Zakharov, Nikolai ^b   Stesmans, Andre ^d   Zacharias, Margit ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^f UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78649739826     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.195401     Document Type: Article

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