Study on atomic layer deposition of amorphous rhodium oxide thin films

Journal of the Electrochemical Society

Volumn 156, Issue 10, 2009, Pages

  Hämäläinen, Jani ^a   Munnik, Frans ^b   Ritala, Mikko ^a   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYZING EFFECTS; CONFORMALITY; CROSS-FLOW REACTORS; HIGH TEMPERATURE; IN-BETWEEN; LOW TEMPERATURE LIMIT; NATIVE OXIDES; NONUNIFORMITY; NUCLEATION LAYERS; OZONE DECOMPOSITION; PARTIAL REDUCTION; RHODIUM OXIDES; SILICON SUBSTRATES; SODA LIME GLASS; SUBLIMATION TEMPERATURE; SUBSTRATE ROTATION; TWO STAGE;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; METALLIC COMPOUNDS; OZONE; RHODIUM; SUBSTRATES; THIN FILMS;

OXIDE FILMS;

EID: 69549116410     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3190157     Document Type: Article

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