-
1
-
-
51849160256
-
New memory sense amplifier design in CMOS technology
-
Jounieh, Lebanon, December p.
-
Tsiatouhas, Y. Chrisanthopoulus, A. Kamoulakos, A.G. Haniotais, T.: 'New memory sense amplifier design in CMOS technology', IEEE Int. Conf. on Electronics, Circuits and Systems, Jounieh, Lebanon, December 2000, p. 19-22
-
(2000)
IEEE Int. Conf. on Electronics, Circuits and Systems
, pp. 19-22
-
-
Tsiatouhas, Y.1
Chrisanthopoulus, A.2
Kamoulakos, A.G.3
Haniotais, T.4
-
2
-
-
3042778488
-
Yield and speed optimization of a latch-type voltage sense amplifier
-
0018-9200
-
Wicht, B. Nirschl, T. Schmitt-Landsiedel, D.: 'Yield and speed optimization of a latch-type voltage sense amplifier', IEEE J. Solid-State Circuits, 2004, 39, (7), p. 1148-1158, 0018-9200
-
(2004)
IEEE J. Solid-State Circuits
, vol.39
, Issue.7
, pp. 1148-1158
-
-
Wicht, B.1
Nirschl, T.2
Schmitt-Landsiedel, D.3
-
3
-
-
0035308547
-
The impact of intrinsic device fluctuation on CMOS SRAM cell stability
-
0018-9200
-
Bhavnagarwala, A.J. Tang, X. Meindl, J.D.: 'The impact of intrinsic device fluctuation on CMOS SRAM cell stability', IEEE J. Solid-State Circuits, 2001, 36, (4), p. 658-665, 0018-9200
-
(2001)
IEEE J. Solid-State Circuits
, vol.36
, Issue.4
, pp. 658-665
-
-
Bhavnagarwala, A.J.1
Tang, X.2
Meindl, J.D.3
-
4
-
-
0034833288
-
Modeling and analysis of manufacturing variations
-
San Diego, USA, May p.
-
Nassif, S.R.: 'Modeling and analysis of manufacturing variations', IEEE Custom Integrated Circuit Conf., San Diego, USA, May 2001, p. 223-228
-
(2001)
IEEE Custom Integrated Circuit Conf.
, pp. 223-228
-
-
Nassif, S.R.1
-
5
-
-
0031365880
-
Intrinsic MOSFET parameter fluctuations due to random dopant placement
-
1063-8210
-
Tang, X. De, V. Meindl, J.D.: 'Intrinsic MOSFET parameter fluctuations due to random dopant placement', IEEE Trans. VLSI Syst., 1997, 5, (4), p. 369-376, 1063-8210
-
(1997)
IEEE Trans. VLSI Syst.
, vol.5
, Issue.4
, pp. 369-376
-
-
Tang, X.1
De, V.2
Meindl, J.D.3
-
6
-
-
0032164821
-
Modeling statistical dopant fluctuations in MOS transistors
-
0018-9383
-
Stolk, P.A. Widdershoven, F.P. Klassen, D.B.M.: 'Modeling statistical dopant fluctuations in MOS transistors', IEEE Trans. Electron. Devices, 1998, 45, (9), p. 1960-1971, 0018-9383
-
(1998)
IEEE Trans. Electron. Devices
, vol.45
, Issue.9
, pp. 1960-1971
-
-
Stolk, P.A.1
Widdershoven, F.P.2
Klassen, D.B.M.3
-
7
-
-
34547684380
-
Statistical simulation methodology for sub-100 nm memory design
-
0013-5194
-
Nho, H. Yoon, S.-S. Wong, S. Jung, S.O.: 'Statistical simulation methodology for sub-100 nm memory design', Electron. Lett., 2007, 43, (16), p. 869-870, 0013-5194
-
(2007)
Electron. Lett.
, vol.43
, Issue.16
, pp. 869-870
-
-
Nho, H.1
Yoon, S.-S.2
Wong, S.3
Jung, S.O.4
-
8
-
-
51649125639
-
Numerical estimation of yield in sub-100 nm SRAM design using MC simulation
-
1057-7130
-
Nho, H. Yoon, S.-S. Wong, S. Jung, S.O.: 'Numerical estimation of yield in sub-100 nm SRAM design using MC simulation', IEEE Trans. Circuits Syst. II, 2008, 55, (9), p. 907-911, 1057-7130
-
(2008)
IEEE Trans. Circuits Syst. II
, vol.55
, Issue.9
, pp. 907-911
-
-
Nho, H.1
Yoon, S.-S.2
Wong, S.3
Jung, S.O.4
-
9
-
-
3042566937
-
An offset compensation technique for latch type sense amplifier in high-speed low-power SRAMs
-
1063-8210
-
Singh, R. Bhat, N.: 'An offset compensation technique for latch type sense amplifier in high-speed low-power SRAMs', IEEE Trans. VLSI Syst., 2004, 12, (6), p. 652-657, 1063-8210
-
(2004)
IEEE Trans. VLSI Syst.
, vol.12
, Issue.6
, pp. 652-657
-
-
Singh, R.1
Bhat, N.2
-
10
-
-
43749097009
-
Robust sense amplifier design under random dopant fluctuations in nano-scale CMOS technologies
-
September p.
-
Yeung, J. Mahmoodi, H.: 'Robust sense amplifier design under random dopant fluctuations in nano-scale CMOS technologies', IEEE Int. SOC Conf., September 2006, p. 261-264
-
(2006)
IEEE Int. SOC Conf.
, pp. 261-264
-
-
Yeung, J.1
Mahmoodi, H.2
-
11
-
-
29144526605
-
Modeling of failure probability and statistical design of SRAM array for yield enhancement in nanoscaled CMOS
-
0278-0070
-
Mukhopadhyay, S. Mahmoodi, H. Roy, K.: 'Modeling of failure probability and statistical design of SRAM array for yield enhancement in nanoscaled CMOS', IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2005, 24, (12), p. 1859-1880, 0278-0070
-
(2005)
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
, vol.24
, Issue.12
, pp. 1859-1880
-
-
Mukhopadhyay, S.1
Mahmoodi, H.2
Roy, K.3
-
12
-
-
0024754187
-
Matching properties of MOS transistors
-
Pelgrom, M.J. Duinmaijer, A.C. Welbers, A.P.G.: 'Matching properties of MOS transistors', IEEE J. Solid-State Circuit, 1989, 33, p. 1433-1440
-
(1989)
IEEE J. Solid-State Circuit
, vol.33
, pp. 1433-1440
-
-
Pelgrom, M.J.1
Duinmaijer, A.C.2
Welbers, A.P.G.3
-
13
-
-
0028548950
-
Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs
-
0018-9383
-
Mizuno, T. Okamura, J. Toriumi, A.: 'Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs', IEEE Trans. Electron Devices, 1994, 41, (11), p. 2216-2221, 0018-9383
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, Issue.11
, pp. 2216-2221
-
-
Mizuno, T.1
Okamura, J.2
Toriumi, A.3
-
14
-
-
37249034179
-
The impact of random device variation on SRAM cell stability in sub-90 nm CMOS technologies
-
1063-8210
-
Agarwal, K. Nassif, N.: 'The impact of random device variation on SRAM cell stability in sub-90 nm CMOS technologies', IEEE Trans. VLSI Syst., 2008, 16, (1), p. 86-97, 1063-8210
-
(2008)
IEEE Trans. VLSI Syst.
, vol.16
, Issue.1
, pp. 86-97
-
-
Agarwal, K.1
Nassif, N.2
-
15
-
-
41549168299
-
Reducing variation in advanced logic technologies: approaches to process and design manufacturability of nanoscale CMOS
-
Washington, DC, USA, December p.
-
Khun, K.J.: 'Reducing variation in advanced logic technologies: approaches to process and design manufacturability of nanoscale CMOS', IEEE Int. Electron Devices Meeting, Washington, DC, USA, December 2007, p. 471-474
-
(2007)
IEEE Int. Electron Devices Meeting
, pp. 471-474
-
-
Khun, K.J.1
-
16
-
-
72849144510
-
Understanding LER-induced statistical variability: a 35,000 sample 3D simulation study
-
Reid, D. Millar, C. Roy, G. Roy, S. Asenov, A.: 'Understanding LER-induced statistical variability: a 35,000 sample 3D simulation study', European Solid-State Device Research Conf., 2009, p. 423-426
-
(2009)
European Solid-State Device Research Conf.
, pp. 423-426
-
-
Reid, D.1
Millar, C.2
Roy, G.3
Roy, S.4
Asenov, A.5
-
17
-
-
67650357573
-
Impact of fixed charge at MOSFETs' SiO2/Si interface on Vth variation
-
Putra, A. Tsunomura, T. Nishida, A. Kamohara, S. Takeuchi, K. Hiramoto, T.: 'Impact of fixed charge at MOSFETs' SiO2/Si interface on Vth variation', Int. Conf. on Simulation of Semiconductor Processes and Devices, 2008, p. 25-28
-
(2008)
Int. Conf. on Simulation of Semiconductor Processes and Devices
, pp. 25-28
-
-
Putra, A.1
Tsunomura, T.2
Nishida, A.3
Kamohara, S.4
Takeuchi, K.5
Hiramoto, T.6
-
18
-
-
0036247929
-
Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
-
0018-9383
-
Asenov, A. Kaya, S. Davies, J.H.: 'Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations', IEEE Trans. Electron Devices, 2002, 49, (1), p. 112-119, 0018-9383
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.1
, pp. 112-119
-
-
Asenov, A.1
Kaya, S.2
Davies, J.H.3
-
19
-
-
33748535403
-
High-performance CMOS variability in the 65-nm regime and beyond
-
et al. p., 0018-8646
-
Bernstein, K. Frank, D.J. Gattiker, A.E.: et al. 'High-performance CMOS variability in the 65-nm regime and beyond', IBM J. Res. Dev., 2006, 50, p. 433-449, 0018-8646
-
(2006)
IBM J. Res. Dev.
, vol.50
, pp. 433-449
-
-
Bernstein, K.1
Frank, D.J.2
Gattiker, A.E.3
-
20
-
-
78149370616
-
-
http://www.eas.asu.deu/~ptm/
-
-
-
-
21
-
-
33947136855
-
Computing with subthreshold leakage: device/circuit/architecture co-design for ultralow-power subthreshold operation
-
1063-8210
-
Raychowndhury, A. Paul, B.C. Roy, K.: 'Computing with subthreshold leakage: device/circuit/architecture co-design for ultralow-power subthreshold operation', IEEE Trans. VLSI Syst., 2005, 13, (11), p. 1213-1224, 1063-8210
-
(2005)
IEEE Trans. VLSI Syst.
, vol.13
, Issue.11
, pp. 1213-1224
-
-
Raychowndhury, A.1
Paul, B.C.2
Roy, K.3
-
22
-
-
85018033479
-
A high sensitivity process variation sensor utilizing sub-threshold operation
-
Meterelliyoz, M. Song, P. Stellari, F. Kulkarni, J.P. Roy, K.: 'A high sensitivity process variation sensor utilizing sub-threshold operation', Custom Integrated Circuits Conf., 2008, p. 125-128
-
(2008)
Custom Integrated Circuits Conf.
, pp. 125-128
-
-
Meterelliyoz, M.1
Song, P.2
Stellari, F.3
Kulkarni, J.P.4
Roy, K.5
-
23
-
-
77649188562
-
Device and circuit co-design robustness studies in the subtreshold logic for ultralow-power application for 32 nm CMOS
-
0018-9383
-
Vaddi, R. Dasgupta, S. Agarwal, P.A.: 'Device and circuit co-design robustness studies in the subtreshold logic for ultralow-power application for 32 nm CMOS', IEEE Trans. Electron Devices, 2010, 57, (3), p. 654-664, 0018-9383
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, Issue.3
, pp. 654-664
-
-
Vaddi, R.1
Dasgupta, S.2
Agarwal, P.A.3
-
24
-
-
25144514874
-
Modeling and sizing for minimum energy operation in subthreshold circuits
-
0018-9200
-
Calhoun, B.H. Wang, A. Chandrakasan, A.: 'Modeling and sizing for minimum energy operation in subthreshold circuits', IEEE J. Solid-State Circuits, 2005, 40, (9), p. 1778-1786, 0018-9200
-
(2005)
IEEE J. Solid-State Circuits
, vol.40
, Issue.9
, pp. 1778-1786
-
-
Calhoun, B.H.1
Wang, A.2
Chandrakasan, A.3
-
25
-
-
70349736169
-
Interests and limitations of technology scaling for subthreshold logic
-
1063-8210
-
Bol, D. Ambroise, R. Flandre, D. Legat, J.-D.: 'Interests and limitations of technology scaling for subthreshold logic', IEEE Trans. VLSI Syst., 2009, 17, (1), p. 1508-1519, 1063-8210
-
(2009)
IEEE Trans. VLSI Syst.
, vol.17
, Issue.1
, pp. 1508-1519
-
-
Bol, D.1
Ambroise, R.2
Flandre, D.3
Legat, J.-D.4
-
26
-
-
0018455052
-
VLSI limitations from drain-induced barrier lowering
-
0018-9383
-
Troutman, R.R.: 'VLSI limitations from drain-induced barrier lowering', IEEE Trans. Electron Devices, 1979, ED-26, (4), p. 461-469, 0018-9383
-
(1979)
IEEE Trans. Electron Devices
, vol.ED-26
, Issue.4
, pp. 461-469
-
-
Troutman, R.R.1
-
27
-
-
84938573188
-
Charge-based compact modeling of multiple-gate MOSFET
-
et al. p.
-
Iniguez, B. Lazaro, A. Hamid, H.A.E.: et al. 'Charge-based compact modeling of multiple-gate MOSFET', IEEE 2007 Custom Integrated Circuits Conf., 2007, p. 49-56
-
(2007)
IEEE 2007 Custom Integrated Circuits Conf.
, pp. 49-56
-
-
Iniguez, B.1
Lazaro, A.2
Hamid, H.A.E.3
-
28
-
-
44949238156
-
The ground plane in buried oxide for controlling short-channel effects in nanoscale SOI MOSFETs
-
0018-9383
-
Kumar, M.J. Siva, M.: 'The ground plane in buried oxide for controlling short-channel effects in nanoscale SOI MOSFETs', IEEE Trans. Electron Devices, 2008, 55, (6), p. 1554-1557, 0018-9383
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, Issue.6
, pp. 1554-1557
-
-
Kumar, M.J.1
Siva, M.2
-
29
-
-
0035519145
-
Scaling considerations for high performance 25 nm Metal-oxide-semiconductor field effect transistors
-
1071-1023
-
Saha, S.: 'Scaling considerations for high performance 25 nm Metal-oxide-semiconductor field effect transistors', J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., 2001, 19, (6), p. 2240-2246, 1071-1023
-
(2001)
J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct.
, vol.19
, Issue.6
, pp. 2240-2246
-
-
Saha, S.1
-
30
-
-
0035478372
-
Design considerations for 25 nm MOSFET devices
-
0038-1101
-
Saha, S.: 'Design considerations for 25 nm MOSFET devices', Solid-State Electron., 2001, 45, (10), p. 1851-1857, 0038-1101
-
(2001)
Solid-State Electron.
, vol.45
, Issue.10
, pp. 1851-1857
-
-
Saha, S.1
-
31
-
-
49049091814
-
Electical characterization and compact modeling of MOSFET body effect
-
Udine, Italy, March p.
-
Quenette, V. Lemoigne, P. Rideau, D.: 'Electical characterization and compact modeling of MOSFET body effect', Int. Conf. on Ultimate Integration of Silicon, Udine, Italy, March 2008, p. 163-166
-
(2008)
Int. Conf. on Ultimate Integration of Silicon
, pp. 163-166
-
-
Quenette, V.1
Lemoigne, P.2
Rideau, D.3
-
32
-
-
60649101907
-
3-D simulation of geometrical variations impact on nanoscale FinFETs
-
p.
-
Yu, S. Zhao, Y. Song, Y. Du, G. Kang, J. Han, R. Liu, X.: '3-D simulation of geometrical variations impact on nanoscale FinFETs', Int. Conf. on Solid-State and Integrated-Circuit Technology, 2008, p. 408-411
-
(2008)
Int. Conf. on Solid-State and Integrated-Circuit Technology
, pp. 408-411
-
-
Yu, S.1
Zhao, Y.2
Song, Y.3
Du, G.4
Kang, J.5
Han, R.6
Liu, X.7
|