Electrical characterization and compact modeling of MOSFET body effect

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 163-166

  Quenette, Vincent ^a,c   Lemoignet, Pascal ^a,d   Rideau, Denis ^a   Clerc, Raphaël ^b   Ciampolini, Lorenzo ^a   Minondo, Michel ^a   Tavernier, Clément ^a   Jaouen, Hervé ^a  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c UNIV PARIS SUD   (France)

^d AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Body effect; Charge sheet model; Compact modeling; Electrical characterization

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; NONMETALS; SILICON; THRESHOLD VOLTAGE;

BODY EFFECT; BODY EFFECTS; CHARGE SHEET MODEL; COMPACT MODELING; DOPANT DISTRIBUTIONS; DOPANT PROFILING; DOPING PROFILES; ELECTRICAL CHARACTERIZATION; ELECTRICAL CHARACTERIZATIONS; EXPERIMENTAL DATA; INTERNATIONAL CONFERENCES; MOSFETS; NON UNIFORMITIES; PROCESS SIMULATIONS; TCAD SIMULATIONS; THRESHOLD VOLTAGE SHIFTS;

DOPING (ADDITIVES);

EID: 49049091814     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527164     Document Type: Conference Paper

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9. "Work in progress, to be published."