3-D simulation of geometrical variations impact on nanoscale FinFETs

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 408-411

  Yu, Shimeng ^a   Zhao, Yuning ^a   Song, Yuncheng ^a   Du, Gang ^a   Kang, Jinfeng ^a   Han, Ruqi ^a   Liu, Xiaoyan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

3-D SIMULATIONS; AUTO CORRELATION FUNCTIONS; DRAIN-INDUCED BARRIERS; FINFETS; GAUSSIAN; GEOMETRICAL VARIATIONS; LINE EDGE ROUGHNESS; NANO-SCALE; NANOSCALE CMOS; OXIDE THICKNESS; QUANTUM CONFINEMENT EFFECTS; SHIFT ANDS; STATISTICAL SIMULATIONS;

CMOS INTEGRATED CIRCUITS; DRAIN CURRENT; FINS (HEAT EXCHANGE); FOURIER ANALYSIS; INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; PHOTORESISTS; POWER SPECTRUM; REGRESSION ANALYSIS; THREE DIMENSIONAL COMPUTER GRAPHICS;

ROUGHNESS MEASUREMENT;

EID: 60649101907     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734551     Document Type: Conference Paper

References (12)

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