Impact of metal gate granularity on threshold voltage variability: A full-scale three-dimensional statistical simulation study

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1199-1201

  Brown, Andrew R ^a   Idris, Niza M ^a   Watling, Jeremy R ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Granularity; metal gate; MOSFETs; variability; work function

Indexed keywords

CMOS DEVICES; GRAIN SIZE; GRANULARITY; INTRINSIC PARAMETERS; LINE EDGE ROUGHNESS; METAL GATE; METAL GATE STACK; MOSFETS; STATISTICAL DISTRIBUTION; STATISTICAL SIMULATION; STATISTICAL VARIABILITY; THRESHOLD VOLTAGE VARIABILITY; VARIABILITY;

MOSFET DEVICES; THREE DIMENSIONAL; THRESHOLD VOLTAGE; WORK FUNCTION;

METALS;

EID: 77958603976     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2069080     Document Type: Article

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