Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks

Journal of Computational Electronics

Volumn 5, Issue 4, 2006, Pages 333-336

  Brown, Andrew R ^a   Watling, Jeremy R ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Fluctuations; High ; Random grain orientation

Indexed keywords

CRYSTAL ORIENTATION; DIELECTRIC PROPERTIES; GATES (TRANSISTOR); GRAIN BOUNDARIES; OXIDE FILMS; POLYCRYSTALLINE MATERIALS; THRESHOLD VOLTAGE;

FLUCTUATIONS; RANDOM GRAIN ORIENTATION;

CMOS INTEGRATED CIRCUITS;

EID: 34248635662     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0009-6     Document Type: Article

References (8)

1. International Technology Roadmap for Semiconductors, http:// public.itrs.net
2. Wilk, G.D., Wallace, R.M., Anthony, J.M.: High-κ gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001)
3. Bersuker, G., Sim, J.H., Young, C.D., Choi, R., Lee, B.H., Lysaght, P., Brown, G.A., Zeitzoff, P.M., Gardner, M., Murto, R.W., Huff, H.R.: Effect of Structural Properties of Hf-Based Gate Stack on Transistor Performance. Mat. Res. Soc. Symp. Proc. 811, 31 (2004)
4. Brown, A.R., Watling, J.R., Asenov, A., Bersuker, G., Zeitzoff, P.: Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-κ gate stack materials. Proc. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE Cat. No. 05TH8826, 27 (2005)
5. Asenov, A., Brown, A.R., Davies, J.H., Saini, S.: Hierarchical approach to 'atomistic' 3D MOSFET simulation. IEEE Trans. Computer-Aided Design of Integrated Circuits and Systems. 18, 1558 (1999)
6. Uma, S., McConnell, A.D., Asheghi, M., Kurabayashi, K., Goodson, K.E.: Temperature-Dependent Thermal Conductivity of Undoped Polycrystalline Silicon Layers. International Journal of Thermophysics 22, 605 (2001)
7. Bersuker, G.: Sematech, personal communication (2005)
8. Roy, G., Adamu-Lema, F., Brown, A.R., Roy, S., Asenov, A.: Simulation of Combined Sources of Intrinsic Parameter Fluctuations in a 'Real; 35 nm MOSFET. Proc. European Solid-State Device Research Conference (ESSDERC), 337 (2005)