32nm general purpose bulk CMOS technology for high performance applications at low voltage

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Arnaud, F ^a,b   Liu, J ^a,c   Lee, Y M ^a,e   Lim, K Y ^a,e   Kohler, S ^a,b   Chen, J ^a,e   Moon, B K ^a,f   Lai, C W ^a,e   Lipinski, M ^a,f   Sang, L ^a,c   Guarin, F ^a,c   Hobbs, C ^a,d   Ferreira, P ^a,b   Ohuchi, K ^a,h   Li, J ^a,c   Zhuang, H ^a,f   Mora, P ^a,b   Zhang, Q ^a,c   Nair, D R ^a,c   Lee, D H ^a,g   Chan, K K ^a,c   Satadru, S ^a,e   Yang, S ^a,c   Koshy, J ^a,c   Hayter, W ^a,c   Zaleski, M ^a,d   Coolbaugh, D V ^a,c   Kim, H W ^a,g   Ee, Y C ^a,e   Sudijono, J ^a,d   Thean, A ^a,c   Sherony, M ^a,b   Samavedam, S ^a,d   Khare, M ^a,c   Goldberg, C ^a,d   Steegen, A ^a,c   more..

^a IBM RESEARCH   (United States)

^b STMICROELECTRONICS   (Italy)

^c IBM MICROELECTRONICS   (United States)

^d FREESCALE SEMICONDUCTOR INC   (United States)

^e Chartered Semiconductor Manufacturing ^*  (Singapore)

^f INFINEON TECHNOLOGIES AG   (Germany)

^g SAMSUNG Electronics   (South Korea)

^h TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BIAS-TEMPERATURE INSTABILITIES; BULK CMOS; CMOS TECHNOLOGIES; DELAY REDUCTIONS; DIGITAL TRANSISTORS; GENERAL PURPOSE; HIGH DATA RATES; HIGH DENSITIES; HIGH DENSITY WIRINGS; HIGH-PERFORMANCE APPLICATIONS; HIGH-SPEED; HOT-CARRIER INJECTIONS; LOW OPERATING POWER; LOW VOLTAGES; MATCHING FACTORS; METAL GATE STACKS; RC DELAYS; RELIABILITY CRITERION; RING OSCILLATORS; SION TECHNOLOGIES; SRAM CELLS; STATIC-NOISE MARGINS;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); SMELTING; STATIC RANDOM ACCESS STORAGE;

MOSFET DEVICES;

EID: 64649085166     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796771     Document Type: Conference Paper

References (9)

1. M.Chudzik et al, Symp. VLSI Tech. Dig p194., 2007
2. R.Gwoziecki al, Symp. VLSI Tech. Dig., 2008
3. S.Ekbote et al, Symp. VLSI Tech. Dig., 2008
4. X.Chen et al, Symp. VLSI Tech. Dig., 2008
5. A.Wei et al, Symp. VLSI Tech. Dig., p216, 2007
6. H.Otha et al, IEDM Tech. Dig., p.247, 2005
7. K.L. Cheng et al, IEDM Tech. Dig. p.243, 2007
8. S.Kubicek et al, Symp. VLSI Tech. Dig., 2008
9. T.Ueno al, Symp. VLSI Tech. Dig., p.128, 2006