Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for sram reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Dadgour, Hamed ^a   Endo, Kazuhiko ^b   Vivek, De ^c   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL APPROACHES; GATE DEVICES; GRAIN ORIENTATIONS; KEY PARAMETERS; METAL GATES; METAL WORKS; MODELING AND ANALYSIS; ORIENTATION EFFECTS; PHYSICAL DIMENSIONS; PROBABILITY DISTRIBUTION FUNCTIONS; SRAM CELLS;

DISTRIBUTION FUNCTIONS; ELECTRON DEVICES; MATERIALS PROPERTIES; RELIABILITY ANALYSIS;

PROBABILITY DISTRIBUTIONS;

EID: 78650760269     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796792     Document Type: Conference Paper

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