Statistical analysis of metal gate workfunction variability, process variation, and random dopant fluctuation in nano-CMOS circuits

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Hwang, Chih Hong ^a   Li, Tien Yeh ^a   Han, Ming Hung ^a   Lee, Kuo Fu ^a   Cheng, Hui Wen ^a   Li, Yiming ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Circuit; Coupled device circuit simulation; Emerging device technology; Intrinsic parameter fluctuation; Modeling and simulation; Nanoscale MOSFET

Indexed keywords

CIRCUIT; COUPLED DEVICES; DEVICE TECHNOLOGIES; INTRINSIC PARAMETER FLUCTUATION; MODELING AND SIMULATION; NANOSCALE MOSFETS;

CAPACITANCE; CIRCUIT SIMULATION; CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE;

COUPLED CIRCUITS;

EID: 74349107928     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290239     Document Type: Conference Paper

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