Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Zhang, Xiao ^a,b   Li, Jing ^c   Grubbs, Melody ^a   Deal, Michael ^a   Magyari Köpe, Blanka ^a   Clemens, Bruce M ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

^b CIS 128X ^*  (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT ANALYSIS; CROSS OVER; DOMINATING FACTORS; DUAL METAL GATE; GRAIN ORIENTATION; LINE EDGE ROUGHNESS; METAL GRAINS; NEW MODEL; ORDERS OF MAGNITUDE; PHYSICAL MODEL; POLYCRYSTALLINE METALS; RANDOM DOPANT FLUCTUATION; TECHNOLOGY NODES;

ELECTRIC NETWORK ANALYSIS; ELECTRON DEVICES; PHOTORESISTS; STATIC RANDOM ACCESS STORAGE; WORK FUNCTION;

ROUGHNESS MEASUREMENT;

EID: 77952409147     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424420     Document Type: Conference Paper

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