A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

2009 Reliability of Compound Semiconductors Digest - ROCS Workshop

Volumn , Issue , 2009, Pages 3-6

  Joh, Jungwoo ^a   Gao, Feng ^a   Palacios, Tomás ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CRITICAL VALUE; CRITICAL VOLTAGES; DEFECT FORMATION; ELASTIC ENERGY; ELECTRICAL DEGRADATION; EXPERIMENTAL OBSERVATION; FIRST-ORDER MODELS; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HETEROSTRUCTURES; HIGH-VOLTAGE STRESS; INVERSE PIEZOELECTRIC EFFECTS; IRREVERSIBLE DEGRADATION; MECHANICAL STRESS; MODEL YIELDS;

DEGRADATION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; STRESSES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72449173339     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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