High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Visalli, Domenica ^a,b   Van Hove, Marleen ^a   Derluyn, Joff ^a   Cheng, Kai ^a,b   Degroote, Stefan ^a   Leys, Maarten ^a   Germain, Marianne ^a   Borghs, Gustaaf ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BREAKDOWN VOLTAGE; DEVICE BREAKDOWN; DOUBLE HETEROSTRUCTURES; GATE DRAIN; HIGH BREAKDOWN; HIGH BREAKDOWN VOLTAGE; ON-RESISTANCE; SI SUBSTRATES; SILICON SUBSTRATES; VOLTAGE RANGES;

ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77955174374     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880835     Document Type: Article

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