SiC technologies for future energy electronics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 9-14

  Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Breakdown; On resistance; Power device; Schottky barrier diode and power MOSFET; Silicon carbide

Indexed keywords

BREAKDOWN; DEVICE TECHNOLOGIES; ELECTRIC POWER; ENERGY SAVING; HIGH EFFICIENCY; HIGH-VOLTAGES; LOW LOSS; ON-RESISTANCE; POWER DEVICES; POWER ELECTRONIC SYSTEMS; POWER SEMICONDUCTOR DEVICES; RECENT PROGRESS; SCHOTTKY BARRIERS; SIC MATERIALS; WIDE-BAND-GAP SEMICONDUCTOR;

ELECTRIC EQUIPMENT; MOSFET DEVICES; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SILICON CARBIDE; TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957862442     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556137     Document Type: Conference Paper

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