700-V 1.0-mΩ · cm2 buried gate SiC-SIT (SiC-BGSIT)

IEEE Electron Device Letters

Volumn 27, Issue 11, 2006, Pages 908-910

  Tanaka, Yasunori ^a   Okamoto, Mitsuo ^a   Takatsuka, Akio ^a   Arai, Kazuo ^a   Yatsuo, Tsutomu ^a   Yano, Koji ^b   Kasuga, Masanobu ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

Buried gate; JFET; Silicon carbide; Static induction transistors

Indexed keywords

CURRENT DENSITY; DRY ETCHING; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; JUNCTION GATE FIELD EFFECT TRANSISTORS; MICROMETERS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

BURIED GATE STRUCTURES; STATIC INDUCTION TRANSISTORS; TRENCH STRUCTURE;

GATES (TRANSISTOR);

EID: 33750496239     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.884724     Document Type: Article

References (7)

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