Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1841-1846

  Hiyoshi, Toru ^a   Hori, Tsutomu ^a,b   Suda, Jun ^a,b   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

Bevel mesa; Junction termination extension (JTE); PiN; Silicon carbide (SiC); Simulation

Indexed keywords

DIODES; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; NONMETALS; OPTICAL DESIGN; REACTIVE ION ETCHING; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON;

4H-SIC PIN; BEVEL MESA; BREAK DOWN VOLTAGES; DEVICE SIMULATIONS; DOSE DEPENDENCES; EXPERIMENTAL STUDIES; HIGH BREAKDOWN VOLTAGE; HIGH VOLTAGES; JUNCTION TERMINATION; JUNCTION TERMINATION EXTENSION (JTE); MESA STRUCTURES; P-N JUNCTIONS; PIN; SILICON CARBIDE (SIC); SILICON CARBIDE DEVICES; SIMULATION;

SILICON CARBIDE;

EID: 49249118802     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926643     Document Type: Article

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