SiC JFET: Currently the best solution for an unipolar SiC high power switch

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 901-906

  Rueschenschmidt, K ^a   Treu, M ^a   Rupp, R ^b   Friedrichs, P ^c   Elpelt, R ^c   Peters, D ^c   Blaschitz, P ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

High power device; JFET; MOSFET; SiC; Switch

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER MOSFET;

GATE OXIDE; HIGH-POWER DEVICES; HIGH-POWER SWITCHES; HIGHER EFFICIENCY; MOS-FET; MOSFETS; NORMALLY-ON; SILICON CARBIDE MOSFETS; SWITCHING DEVICES; UNIPOLAR SILICON;

SILICON CARBIDE;

EID: 63849316578     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.901     Document Type: Conference Paper

References (7)

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4. Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner, Karl-Otto Dohnke, Rudolf Elpelt and Dietrich Stephani: Proc. EPE 2001, Graz.
5. Information on http://www.infineon.com/optimos (Datasheet IPD400N06N).
6. M. Treu: Stabilitaet von Metall-Oxid-Halbleiter-Strukturen auf hexagonalem Siliciumkarbid, (Erlanger Berichte Mikroelektronik, Shaker Verlag Aachen, Germany 1999).
7. P. Friedrichs, H. Mitlehner, R. Schoerner, R. Elpelt, and D. Stephani: Mater. Sci. Forum Vol. 457-460 (2004), p. 1201.