Chapter 7 Diamond held effect transistors using h-terminated surfaces

Semiconductors and Semimetals

Volumn 77, Issue C, 2004, Pages 311-338

  Kawarada, Hiroshi ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROLYTES; HYDROPHOBICITY; MISFET DEVICES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SURFACE CHEMISTRY; TRANSCONDUCTANCE;

CARRIER DISTRIBUTIONS; ELECTROLYTE SOLUTIONS; H-TERMINATED SURFACE; INSULATING PROPERTIES; NANODEVICE APPLICATIONS; POLYCRYSTALLINE DIAMONDS; SCHOTTKY BARRIER HEIGHTS; SINGLE HOLE TRANSISTORS;

DIAMONDS;

EID: 77956673566     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(04)80019-X     Document Type: Article

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