Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 9 A/B, 2000, Pages

  Umezawa, Hitoshi ^a,c   Taniuchi, Hirotada ^a,c   Arima, Takuya ^a,c   Tachiki, Minoru ^a,c   Tsugawa, Kazuo ^a,c   Yamanaka, Sadanori ^b,c   Takeuchi, Daisuke ^b,c   Okushi, Hideyo ^b,c   Kawarada, Hiroshi ^a,c  

^a WASEDA UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; CARRIER CONCENTRATION; EPITAXIAL GROWTH; HYDROGEN; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL CONDUCTIVITY; TRANSCONDUCTANCE;

GATE INSULATORS; HOMOEPITAXIAL GROWTH;

MISFET DEVICES;

EID: 0034268621     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l908     Document Type: Article

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