DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 378-381

  Ishizaka, Hiroaki ^a,b   Umezawa, Hitoshi ^a,b   Taniuchi, Hirotada ^a,b   Arima, Takuya ^a,b   Fujihara, Naoki ^a,b   Tachiki, Minoru ^a,b   Kawarada, Hiroshi ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Current decrease; Cut off frequency; Diamond; MISFET

Indexed keywords

DIAMONDS; HYDROGEN; OSCILLATIONS; TRANSCONDUCTANCE;

PARASITIC RESISTANCE;

FIELD EFFECT TRANSISTORS;

DIAMOND;

EID: 0036508311     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(01)00649-5     Document Type: Article

References (11)