High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 11 A, 1999, Pages

  Umezawa, Hitoshi ^a,c   Tsugawa, Kazuo ^a,c   Yamanaka, Sadanori ^b,c   Takeuchi, Daisuke ^b,c   Okushi, Hideyo ^b,c   Kawarada, Hiroshi ^a,c  

^a WASEDA UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING DIAMONDS; SEMICONDUCTING FILMS; TRANSCONDUCTANCE;

HOMOEPITAXIAL DIAMONDS;

MESFET DEVICES;

EID: 0033225739     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1222     Document Type: Article

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