Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistors

Journal of Applied Physics

Volumn 82, Issue 7, 1997, Pages 3422-3429

  Yun, Young ^a   Maki, Tetsuro ^a   Kobayashi, Takeshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DIAMOND FILMS; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MISFET DEVICES; SEMICONDUCTOR DIODES; SUBSTRATES; SURFACES;

CAPACITANCE VOLTAGE CURVES; HALL MOBILITY; SEMICONDUCTING DIAMOND FILMS; SURFACE STATE DENSITY DISTRIBUTION; VALENCE BAND EDGE;

SEMICONDUCTING DIAMONDS;

EID: 0031248147     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365658     Document Type: Article

References (18)

1. G. Sh. Gildenblat, S. A. Grot, C. W. Hatfield, and A. R. Badzian, IEEE Electron Device Lett. EDL-12, 37 (1991).
2. S. A. Grot, G. Sh. Gildenblat, and A. R. Badzian, IEEE Electron Device Lett. EDL-13, 462 (1992).
3. C. R. Zeisse, C. A. Hewett, R. Nguyen, J. R. Zeidler, and R. G. Wilson,IEEE Electron Device Lett. EDL-12, 602 (1991).
4. Y. Otsuka, S. Suzuki, S. Shikama, T. Maki, and T. Kobayashi, Jpn. J. Appl. Phys., Part 2 34, L551 (1995).
5. S. Suzuki, Y. Otsuka, T. Maki, and T. Kobayashi, Jpn. J. Appl. Phys., Part 2 35, L1031 (1996).
6. T. Kobayashi, Y. Yun, Y. Otsuka, and T. Maki, Diam. Films Technol. 6, 379 (1996).
7. E. H. Nicollian and A. Goetzberger, Appl. Phys. Lett. 7, 216 (1965).
8. K. H. Zaininger and G. Warfield, IEEE Trans. Electron Devices ED-12, 179 (1965).
9. C. N. Berglund, IEEE Trans. Electron Devices ED-13, 701 (1966).
10. L. M. Terman, Solid-State Electron. 5, 285 (1962).
11. M. Okamura and T. Kobayashi, Jpn. J. Appl. Phys. 19, 2143 (1980).
12. M. Okamura and T. Kobayashi, Jpn. J. Appl. Phys. 19, 2151 (1980).
13. M. W. Geis, J. A. Gregory, and B. B. Pete, IEEE Trans. Electron Devices ED-38, 619 (1991).
14. M. A. Plano, M. D. Moyer, and M. M. Moreno, Proceedings of Second International High Temperature Electronics Conference, Charlotte, N.C., 1994, p. VI 23.
15. Y. Mori, H. Kawarada, and A. Hiraki, Appl. Phys. Lett. 58, 940 (1991).
16. T. Ando, K. Yamamoto, M. Ishii, M. Kamo, and Y. Sato, J. Chem. Soc. Faraday Trans. 89, 3635 (1993).
17. Y. Yun, T. Maki, and T. Kobayashi, Appl. Surf. Sci. (to be published 1997).
18. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap. 7.