Microwave performance of diamond surface-channel FETs

IEEE Electron Device Letters

Volumn 23, Issue 8, 2002, Pages 488-490

  Aleksov, Aleksandar ^b   Denisenko, A ^b   Spitzberg, U ^b   Ebert, W ^b   Kohn, Erhard ^a,b  

^a IEEE

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Diamond; FET; S parameters; Surface channel

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; PARAMETER ESTIMATION; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

SURFACE CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 0036686969     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.801286     Document Type: Article

References (11)

1. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements
2. Hydrogen terminated surfaces and interfaces
3. Diamond surface-channel FET structure with 200 V breakdown voltage
4. Diamond power FET concept
5. High-frequency performance of diamond field-effect transistor
6. Hypothesis on the conductivity mechanism in hydrogen terminated diamond films
7. Design calculations for submicron gatelength AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge control model
8. Hole-drift velocity in natural diamond
9. Breakdown field and saturated carrier velocity in diamond
10. Diamond transistor performance and fabrication
11. Prospects of diamond devices