High performance diamond MISFETs using CaF2 gate insulator

Diamond and Related Materials

Volumn 12, Issue 3-7, 2003, Pages 399-402

  Miyamoto, S ^a,b   Matsudaira, H ^a,b   Ishizaka, H ^a,b   Nakazawa, K ^a,b   Taniuchi, H ^a,b   Umezawa, H ^a,b   Tachiki, M ^a,b   Kawarada, H ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CaF2; Diamond properties application; FET; Hydrogen terminated; MIS

Indexed keywords

CALCIUM COMPOUNDS; CARRIER MOBILITY; GATES (TRANSISTOR); PASSIVATION; SEMICONDUCTING DIAMONDS;

CUT-OFF FREQUENCY;

MISFET DEVICES;

DIAMOND;

EID: 0037766184     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(03)00034-7     Document Type: Article

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