In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

Applied Physics Letters

Volumn 75, Issue 16, 1999, Pages 2452-2454

  Luscher S ^a   Fuhrer, A ^a   Held, R ^a   Heinzel, T ^a   Ensslin, K ^a   Wegscheider, W ^b,c  

^a ETH ZURICH   (Switzerland)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000342720     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125045     Document Type: Article

References (17)

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