Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3101-3107

  Tsugawa, Kazuo ^a,b   Umezawa, Hitoshi ^a   Kawarada, Hiroshi ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Device simulation; Diamond; Hydrogen terminated surface; MESFET; Surface channel

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; DIAMONDS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

DEVICE SIMULATION;

MESFET DEVICES;

EID: 0035328452     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3101     Document Type: Article

References (27)